Allison Lim

Materials Chemist

Control of the band-edge positions of crystalline Si (111) by surface functionalization with 3, 4, 5-trifluorophenylacetylenyl moieties


Journal article


Noah T. Plymale, Anshul A. Ramachandran, Allison Lim, Bruce S. Brunschwig, Nathan S. Lewis
The Journal of Physical Chemistry C, vol. 120(26), 2016, pp. 14157-14169


Cite

Cite

APA   Click to copy
Plymale, N. T., Ramachandran, A. A., Lim, A., Brunschwig, B. S., & Lewis, N. S. (2016). Control of the band-edge positions of crystalline Si (111) by surface functionalization with 3, 4, 5-trifluorophenylacetylenyl moieties. The Journal of Physical Chemistry C, 120(26), 14157–14169. https://doi.org/10.1021/acs.jpcc.6b03824


Chicago/Turabian   Click to copy
Plymale, Noah T., Anshul A. Ramachandran, Allison Lim, Bruce S. Brunschwig, and Nathan S. Lewis. “Control of the Band-Edge Positions of Crystalline Si (111) by Surface Functionalization with 3, 4, 5-Trifluorophenylacetylenyl Moieties.” The Journal of Physical Chemistry C 120, no. 26 (2016): 14157–14169.


MLA   Click to copy
Plymale, Noah T., et al. “Control of the Band-Edge Positions of Crystalline Si (111) by Surface Functionalization with 3, 4, 5-Trifluorophenylacetylenyl Moieties.” The Journal of Physical Chemistry C, vol. 120, no. 26, 2016, pp. 14157–69, doi:10.1021/acs.jpcc.6b03824.


BibTeX   Click to copy

@article{noah2016a,
  title = {Control of the band-edge positions of crystalline Si (111) by surface functionalization with 3, 4, 5-trifluorophenylacetylenyl moieties},
  year = {2016},
  issue = {26},
  journal = {The Journal of Physical Chemistry C},
  pages = {14157-14169},
  volume = {120},
  doi = {10.1021/acs.jpcc.6b03824},
  author = {Plymale, Noah T. and Ramachandran, Anshul A. and Lim, Allison and Brunschwig, Bruce S. and Lewis, Nathan S.}
}


Share



Follow this website


You need to create an Owlstown account to follow this website.


Sign up

Already an Owlstown member?

Log in